c opyright ruichips semiconductor co . , ltd rev . b C dec ., 201 1 www. ruichips .com ru 30 6 0k n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t c =25 c unless otherwise noted) v dss drain - source voltage 30 v gss gate - source voltage 2 0 v t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25 c 53 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 212 a t c =25 c 53 i d continuous drain current t c =100 c 41 a t c =25 c 50 p d maximum power dissipation t c =100 c 25 w r q jc thermal resistance - junction to case 3 c /w drain - source avalanche ratings e as avala nche energy, single pulsed 110 m j ? 3 0 v/ 53 a, r ds ( on ) = 9 m ( tpy.)@ v gs =10v r ds ( on ) = 13 m ( tpy.)@ v gs = 4.5 v ? super high dense cell design ? reliable and rugged ? fast switching and fully a valanche rated ? lead free and green devices available ( rohs compliant) ? power management in desktop computer, portable equipment and dc/dc converters. absolute maximum ratings n - channel mosfe t to251
c opyright ruichips semiconductor co . , ltd rev . b C dec ., 201 1 2 www. ruichips .com ru 30 6 0k electrical characteristics ( t c =25 c unless otherwise noted) ru 30 60 k symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - sour ce breakdown voltage v gs =0v, i ds =250 m a 30 v v ds = 30 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 1.5 2 2.7 v i gss gate leakage current v gs = 2 0 v, v ds =0v 100 n a v gs = 10 v, i ds = 30 a 9 1 2 m w r ds ( on ) drain - source on - state resistance v gs = 4.5 v, i ds = 25 a 1 3 1 7 m w notes : pulse width limited by safe operating area. calculated continuous current based on maximum allowable junction temperature . current limited by bond wire. limited by t jmax , i as = 2 1 a, v dd = 20 v, r g = 50 , starting t j = 25c . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 30 a, v gs =0v 1. 2 v t rr reverse recovery time 24 ns q rr reverse recovery charge i sd = 30 a, dl sd /dt=100a/ m s 16 nc dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1. 2 w c iss input capacitance 7 80 c oss output capacitance 19 0 c rss reverse transfer capacitance v gs =0v, v ds = 20 v, frequency=1.0mhz 70 pf t d ( on ) turn - on delay time 6 t r turn - on rise time 8 t d ( off ) turn - off delay time 20 t f turn - off fall time v dd = 20 v, r l = 15 w , i ds = 30 a, v gen = 10v, r g = 6 w 4 ns gate charge characteristics q g total gate charge 1 5 2 0 q gs gate - source ch arge 2. 5 q gd gate - drain charge v ds = 20 v, v gs = 10v, i ds = 30 a 4 nc
c opyright ruichips semiconductor co . , ltd rev . b C dec ., 201 1 3 www. ruichips .com ru 30 6 0k typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v d s - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . b C dec ., 201 1 4 www. ruichips .com ru 30 6 0k typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . b C dec ., 201 1 5 www. ruichips .com ru 30 6 0k typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction temper ature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . b C dec ., 201 1 6 www. ruichips .com ru 30 6 0k avalanche test circuit a nd waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . b C dec ., 201 1 7 www. ruichips .com ru 30 6 0k ordering and marking information device marking package packaging quantity reel size tape width ru 3060k RU3060K to - 251 tube 80 - -
c opyright ruichips semiconductor co . , ltd rev . b C dec ., 201 1 8 www. ruichips .com ru 30 6 0k package information to251 all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbol min max min max a 2.200 2 .4 0.087 0.094 d 6.350 6.650 0.250 0.262 a1 1.050 1.350 0.042 0.054 d1 5.200 5.400 0.205 0.213 b 1.350 1.650 0.053 0.065 e 5.400 5.700 0.213 0.224 b 0.500 0.700 0.020 0.028 e 2.300 typ 0.091 typ b1 0.700 0.900 0.028 0.035 e1 4.500 4.700 0.177 0.185 c 0.430 0.580 0.017 0.023 l 7.500 7.900 0.295 0.311 c1 0.430 0.580 0.017 0.023
c opyright ruichips semiconductor co . , ltd rev . b C dec ., 201 1 9 www. ruichips .com ru 30 6 0k customer service worldwide sales and service : sales@ru i chips.com technica l s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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